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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD569 DESCRIPTION *High Collector Current:: IC= 7A *Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A *Complement to Type 2SB708 APPLICATIONS *Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 80 80 7 7 15 3.5 40 .cn mi e V V V A A A ICM Collector Current-Peak IB B Base Current-Continuous Total Power Dissipation @ TC=25 PC Total Power Dissipation @ Ta=25 TJ Junction Temperature 2 W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD569 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 A hFE-1 DC Current Gain IC= 3A; VCE= 1V hFE-2 DC Current Gain hFE-1 Classifications M 40-80 L 60-120 w w K 100-200 scs .i w IC= 5A; VCE= 1V .cn mi e 40 20 200 isc Websitewww.iscsemi.cn 2 |
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